2006-12-01 rev. 2.3 page 1 bss670s2l opti mos a buck converter series product summary v ds 55 v r ds(on) 650 m w i d 0.54 a feature n-channel enhancement mode logic level pg-sot 23 gate pin1 drain pin 3 source pin 2 marking bss type package tape and reel bss670s2l pg-sot 23 l6327: 3000 pcs/reel maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d 0.54 0.43 a pulsed drain current t a =25c i d puls 2.2 gate source voltage v gs 20 v power dissipation t a =25c p tot 0.36 w operating and storage temperature t j , t stg -55... +150 c iec climatic category; din iec 68-1 55/150/56 avalanche energy, single pulse i d = 0.54 a, r g = 25 w 1) e as 8.1 mj a valanche rated 1 ) ? ? ? ? ? ? ? 1) valid from devices with date code 0604 onwards
2006-12-01 rev. 2.3 page 2 bss670s2l thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - soldering point (pin 3) r thjs - - 290 k/w smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja - - - - 350 300 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =1ma v (br)dss 55 - - v gate threshold voltage, v gs = v ds i d =2.7a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds =55v, v gs =0, t j =25c v ds =55v, v gs =0, t j =150c i dss - - 0.01 1 0.1 10 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =4.5v, i d =270ma r ds(on) - 430 825 m w drain-source on-state resistance v gs =10v, i d =270ma r ds(on) - 346 650 2) device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2006-12-01 rev. 2.3 page 3 bss670s2l electrical characteristics parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 3 2* i d * r ds(on)max , i d =0.54a 0.6 1.2 - s input capacitance c iss v gs =0, v ds =25v, f =1mhz - 56 75 pf output capacitance c oss - 13 18 reverse transfer capacitance c rss - 7 10 turn-on delay time t d(on) v dd =30v, v gs =4.5v, i d =0.54a, r g =130 w - 9 14 ns rise time t r - 25 37 turn-off delay time t d(off) - 21 31 fall time t f - 24 32 gate charge characteristics gate to source charge q gs v dd =40v, i d =0.54a - 0.19 0.25 nc gate to drain charge q gd - 0.57 0.86 gate charge total q g v dd =40v, i d =0.54a, v gs =0 to 10v - 1.7 2.26 gate plateau voltage v (plateau) v dd =40v, i d =0.54a - 3.1 - v reverse diode inverse diode continuous forward current i s t a =25c - - 0.38 a inv. diode direct current, pulsed i sm - - 2.2 inverse diode forward voltage v sd v gs =0, i f =0.54a - 0.8 1.1 v reverse recovery time t rr v r =30v, i f = l s , d i f /d t =100a/s - 51 64 ns reverse recovery charge q rr - 22 28 nc
2006-12-01 rev. 2.3 page 4 bss670s2l 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 w 0.38 bss670s2l p tot 2 drain current i d = f ( t a ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 c 160 t a 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 a 0.6 bss670s2l i d 4 transient thermal impedance z thjs = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 k/w bss670s2l z thjs single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c 10 -1 10 0 10 1 10 2 v v ds -3 10 -2 10 -1 10 0 10 1 10 a bss670s2l i d r ds(on) = v ds / i d dc 10 ms 1 ms 100 s t p = 23.0 s
2006-12-01 rev. 2.3 page 5 bss670s2l 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v ds 0 0.5 1 1.5 2 a 3 i d 3v 3.5v 4v 4.5v 10v 6v 5v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 0.2 0.4 0.6 0.8 a 1.2 i d 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 m w 1500 r ds(on) 3.5v 4v 4.5v 5v 6v 10v 7 typ. transfer characteristics i d = f ( v gs ); v ds 3 2 x i d x r ds(on)max parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v gs 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 a 2.2 i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 0.4 0.8 1.2 1.6 a 2.2 i d 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 s 2.2 g fs
2006-12-01 rev. 2.3 page 6 bss670s2l 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 270 ma, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 200 400 600 800 1000 1200 1400 1600 m w 1900 bss670s2l r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 180 t j 0 0.5 1 1.5 v 2.5 v gs(th) 2 m a 10 m a 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz 0 5 10 15 20 v 30 v ds 0 10 1 10 2 10 3 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -2 10 -1 10 0 10 1 10 a bss670s2l i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2006-12-01 rev. 2.3 page 7 bss670s2l 13 typ. gate charge v gs = f ( q gate ) parameter: i d = 0.54 a pulsed 0 0.4 0.8 1.2 1.6 2 nc 2.6 q gate 0 2 4 6 8 10 12 v 16 bss670s2l v gs 0,8 v ds max ds max v 0,2 14 drain-source breakdown voltage v (br)dss = f ( t j ) parameter: i d =10 ma -60 -20 20 60 100 c 180 t j 50 52 54 56 58 60 62 v 66 bss670s2l v (br)dss
2006-12-01 rev. 2.3 page 8 bss670s2l published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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